Fused Alumina Plate
Product Description
Fused Alumina Plate is mainly formed by gelation and casting. Its thickness is uniform, up to 0.1mm, tolerance can be controlled within ±0.01mm, and its density is not less than 3.7g/cm3. In addition, its surface roughness can reach Ra0.2um, and its deep processing can be controlled below Ra0.02um. You can process laser holes, slots, etc. according to your needs.
Application
Fused Alumina Plate can be used in
® High Power Power Semiconductor Modules; Semiconductor Coolers, Electronic Heaters; Power Control Circuits, Power Hybrid Circuits.
® Smart Power Components; High Frequency Switching Power Supply, Solid State Relays.
® Automotive, Aerospace and Military Electronics Components.
® Solar panel components; telecommunications switches, receiving systems; lasers and other industrial electronics.
Advantages
® Fused Alumina Plate has strong mechanical stress, shape stability; high strength, high thermal conductivity, high insulation; strong binding and anti-corrosion.
® Excellent thermal cycling performance with up to 50,000 cycles and high reliability.
® Same as PCB (or IMS substrate) etched out of a variety of graphic structure; Pollution-free, pollution-free.
® Wide temperature range -55 ℃ ~ 1480 ℃;
® Coefficient of thermal expansion close to silicon, simplifying the power module manufacturing process.
Performance project | Unit | Value | Performance project | Unit | Value |
Alumina content | wt /% | ≥96 | Volume resistivity | Ω.cm 20℃ | 1012 |
Bulk density | g/cm3 | ≥3.7 | Breakdown strength | KV / mm | ≥15 |
Hardness (HRA) | HRA | ≥ 82 | Acid resistance | mg / m2 | ≤7 |
Flexural strength | MPa | ≥ 320 | Alkali resistance | mg / m2 | ≤0.2 |
Safety temperature | ℃ | -55~1480 | Wear resistance | g / m2 | ≤0.2 |
Water absorption | % | <0.01 | Compressive strength | MPa | ≥ 2400 |
Coefficient of linear expansion | x10-6 / ℃ | 7.5 ~ 8.5 | Bending strength | MPa | ≥200 |
Dielectric constant | ξ, 20 ° C, -1 MHz | 9 | Modulus of elasticity | GPa | 300 |
Dielectric loss | tanδx10-4, 1MHz | 3 | Thermal conductivity | W / m.k (20 ℃) | 24 ~ 25 |
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